summary npn v ceo = 50v; r sat = 68m ; c = 4a pnp v ceo =-40v; r sat = 104m ; c = -3a description packaged in the innovative 3mm x 2mm mlp (micro leaded package) outline, these new 4 th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in dc-dc circuits and various driving and power management functions. additionally users gain several other key benefits: performance capability equivalent to much larger packages improved circuit efficiency & power levels pcb area and device placement savings lower package height (nom 0.9mm) reduced component count features ? low equivalent on resistance ? extremely low saturation voltage (100mv @1a--npn) ? h fe characterised up to 6a ? i c =4a continuous collector current ? 3mm x 2mm mlp applications ? dc - dc converters ? charging circuits ? power switches ? motor control ? ccfl backlighting device marking dc3 ZXTDC3M832 issue 1 - june 2002 1 mpps? miniature package power solutions dual 50v npn & 40v pnp low saturation transistor combination b1 c1 e1 3mm x 2mm mlp underside view pinout device reel tape width quantity per reel ZXTDC3M832ta 7 8mm 3000 ZXTDC3M832tc 13 8mm 10000 ordering information 3mm x 2mm (dual die) mlp b2 c2 e2 obsolete - please use zxtc6719mc
ZXTDC3M832 issue 1 - june 2002 2 parameter symbol npn pnp unit collector-base voltage v cbo 100 -50 v collector-emitter voltage v ceo 50 -40 v emitter-base voltage v ebo 7.5 -7.5 v peak pulse current i cm 6- 4 a continuous collector current (a)(f) i c 4- 3 a base current i b 1000 ma power dissipation at ta=25c (a)(f) linear derating factor p d 1.5 12 w mw/c power dissipation at ta=25c (b)(f) linear derating factor p d 2.45 19.6 w mw/c power dissipation at ta=25c (c)(f) linear derating factor p d 1 8 w mw/c power dissipation at ta=25c (d)(f) linear derating factor p d 1.13 9 w mw/c power dissipation at ta=25c (d)(g) linear derating factor p d 1.7 13.6 w mw/c power dissipation at ta=25c (e)(g) linear derating factor p d 3 24 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings. parameter symbol value unit junction to ambient (a)(f) r ja 83.3 c/w junction to ambient (b)(f) r ja 51 c/w junction to ambient (c)(f) r ja 125 c/w junction to ambient (d)(f) r ja 111 c/w junction to ambient (d)(g) r ja 73.5 c/w junction to ambient (e)(g) r ja 41.7 c/w thermal resistance notes (a) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditio ns with all exposed pads attached. the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with minimal lead connections only. (d) for a dual device surface mounted on 10 sq cm single sided 1oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device . (e) for a dual device surface mounted on 85 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device . (f) for a dual device with one active die. (g) for dual device with 2 active die running at equal power. (h) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (i) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. the thermal resistance for a dual device mounted on 1.5mm thick fr4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is rth = 250c/w giving a power rating of ptot = 500mw. obsolete - please use zxtc6719mc
ZXTDC3M832 issue 1 - june 2002 3 0.1 1 10 0.01 0.1 1 10 note (a)(f) 100us 100ms 1s v ce(sat) limited 1ms pnp safe operating area single pulse, t amb =25c dc 10ms i c collector current (a) v ce collector-emitter voltage (v) 0.1 1 10 100 0.01 0.1 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 note (a)(f) 100us 100ms 1s v ce(sat) limited 1ms npn safe operating area single pulse, t amb =25c dc 10ms i c collector current (a) v ce collector-emitter voltage (v) 1oz cu note (d)(f) 1oz cu note (d)(g) 2oz cu note (a)(f) 2oz cu note (e)(g) derating curve t amb =25c max power dissipation (w) temperature (c) note (a)(f) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 1oz copper note (g) 1oz copper note (f) 2oz copper note (f) 2oz copper note (g) thermal resistance v board area thermal resistance (c/w) board cu area (sqcm) 1oz copper note (g) 2oz copper note (g) 1oz copper note (f) 2oz copper note (f) power dissipation v board area t amb =25c t jmax =150c continuous p d dissipation (w) board cu area (sqcm) typical characteristics obsolete - please use zxtc6719mc
ZXTDC3M832 issue 1 - june 2002 4 parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 100 190 v i c =100 a collector-emitter breakdown voltage v (br)ceo 50 65 v i c =10ma* emitter-base breakdown voltage v (br)ebo 7.5 8.2 v i e =100 a collector cut-off current i cbo 25 na v cb =80v emitter cut-off current i ebo 25 na v eb =6v collector emitter cut-off current i ces 25 na v ces =40v collector-emitter saturation voltage v ce(sat) 10 70 145 115 225 270 20 100 200 220 300 320 mv mv mv mv mv mv i c =0.1a, i b =10ma* i c =1a, i b =50ma* i c =1a, i b =10ma* i c =2a, i b =50ma* i c =3a, i b =100ma* i c =4a, i b =200ma* base-emitter saturation voltage v be(sat) 1.00 1.05 v i c =4a, i b =200ma* base-emitter turn-on voltage v be(on) 0.94 1.00 v i c =4a, v ce =2v* static forward current transfer ratio h fe 200 300 200 100 400 450 400 225 40 i c =10ma, v ce =2v* i c =0.2a, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* i c =6a, v ce =2v* transition frequency f t 100 165 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 12 20 pf v cb =10v, f=1mhz turn-on time t (on) 170 ns v cc =10v, i c =1a i b1 =i b2 =10ma turn-off time t (off) 750 ns npn transistor electrical characteristics (at t amb = 25c unless otherwise stated). *measured under pulsed conditions. pulse width=300 s. duty cycle 2% obsolete - please use zxtc6719mc
ZXTDC3M832 issue 1 - june 2002 5 1m 10m 100m 1 10 1m 10m 100m 1m 10m 100m 1 10 0.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 0 90 180 270 360 450 540 630 v ce(sat) vi c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) vi c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe vi c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) vi c i c /i b =50 100c -55c v be(sat) (v) i c collector current (a) v be(on) vi c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe ) npn characteristics obsolete - please use zxtc6719mc
ZXTDC3M832 issue 1 - june 2002 6 parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 -80 v i c =-100 a collector-emitter breakdown voltage v (br)ceo -40 -70 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -7.5 -8.5 v i e =-100 a collector cut-off current i cbo -25 na v cb =-40v emitter cut-off current i ebo -25 na v eb =-6v collector emitter cut-off current i ces -25 na v ces =-32v collector-emitter saturation voltage v ce(sat) -25 -150 -195 -210 -260 -40 -220 -300 -300 -370 mv mv mv mv mv i c =-0.1a, i b =-10ma* i c =-1a, i b =-50ma* i c =-1.5a, i b =-100ma* i c =-2a, i b =-200ma* i c =-2.5a, i b =-250ma* base-emitter saturation voltage v be(sat) -0.97 -1.05 v i c =-2.5a, i b =-250ma* base-emitter turn-on voltage v be(on) -0.89 -0.95 v i c =-2.5a, v ce =-2v* static forward current transfer ratio h fe 300 300 180 60 12 480 450 290 130 22 i c =-10ma, v ce =-2v* i c =-0.1a, v ce =-2v* i c =-1a, v ce =-2v* i c =-1.5a, v ce =-2v* i c =-3a, v ce =-2v* transition frequency f t 150 190 mhz i c =-50ma, v ce =-10v f=100mhz output capacitance c obo 19 25 pf v cb =-10v, f=1mhz turn-on time t (on) 40 ns v cc =-15v, i c =-0.75a i b1 =i b2 =10ma turn-off time t (off) 435 ns pnp transistor electrical characteristics (at t amb = 25c unless otherwise stated). *measured under pulsed conditions. pulse width=300 s. duty cycle 2% obsolete - please use zxtc6719mc
ZXTDC3M832 issue 1 - june 2002 7 1m 10m 100m 1 10m 100m 1 1m 10m 100m 1 0.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 10m 100m 1 0.4 0.6 0.8 1.0 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 0 90 180 270 360 450 540 630 v ce(sat) vi c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) vi c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe vi c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) vi c i c /i b =50 100c -55c v be(sat) (v) i c collector current (a) v be(on) vi c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe ) pnp characteristics obsolete - please use zxtc6719mc
ZXTDC3M832 issue 1 - june 2002 8 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4422 fax: (44) 161 622 4420 uksales@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny11788 usa telephone: (631) 360 2222 fax: (631) 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza, tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2002 controlling dimensions in millimetres approx. converted dimensions in inches mlp832 package outline (3mm x 2mm micro leaded package) dim millimetres inches dim millimetres inches min. max. min. max. min. max. min. max. a 0.80 1.00 0.031 0.039 e 0.65 ref 0.0256 bsc a1 0.00 0.05 0.00 0.002 e 2.00 bsc 0.0787 bsc a2 0.65 0.75 0.0255 0.0295 e2 0.43 0.63 0.017 0.0249 a3 0.15 0.25 0.006 0.0098 e4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 l 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 l2 0.125 0.00 0.005 d 3.00 bsc 0.118 bsc r 0.075 bsc 0.0029 bsc d2 0.82 1.02 0.032 0.040 0 12 0 12 d3 1.01 1.21 0.0397 0.0476 mlp832 package dimensions obsolete - please use zxtc6719mc
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